SemiQ has introduced its QSiC Dual3 family of 1200 V half-bridge SiC MOSFET modules for applications including motor drives in data center cooling systems, grid converters in energy storage systems and industrial drives.
The new lineup includes six modules in a 62 mm x 152 mm S4B1 half-bridge package, with on-resistance options of 1 mΩ, 1.4 mΩ, and 2 mΩ. Three versions also add a parallel Schottky barrier diode, which SemiQ says can further reduce switching losses in high-temperature operation. The company says two of the new devices achieve a power density of 240 W/in³.
SemiQ is positioning the Dual3 family as a relatively easy SiC upgrade path for systems built around IGBT modules. The company says the parts were developed to enable IGBT replacement with minimal redesign, and that all MOSFET die undergo wafer-level gate-oxide burn-in screening above 1,450 V. SemiQ also says the modules have low junction-to-case thermal resistance, enabling smaller and lighter heatsinks and simpler overall system design.
“Rising AI-driven power and thermal demands in data centers are pushing the limits of traditional cooling and power systems,” said SemiQ President Timothy Han. He said the Dual3 series is aimed at 250 kW liquid chiller applications on both active front ends and compressor drives, with lower size and weight than comparable silicon IGBT solutions.
Source: SemiQ
